Passivation of black silicon boron emitters with atomic layer deposited aluminum oxide (pages 950–954)
Päivikki Repo, Jan Benick, Guillaume von Gastrow, Ville Vähänissi, Friedemann D. Heinz, Jonas Schön, Martin C. Schubert and Hele Savin
Article first published online: 23 AUG 2013 | DOI: 10.1002/pssr.201308096
The nanostructured surface – also called black silicon (b-Si) – is a promising texture for solar cells because of its extremely low reflectance combined with efficient surface passivation by atomic layer deposited (ALD) thin films. In this Letter, the authors show how different boron diffusions affect the optical properties of b-Si and demonstrate that also highly boron-doped b-Si emitters can be passivated with atomic layer deposited Al2O3 by reaching J0e values as low as 51 fA/cm2.