Highly stable amorphous indium-zinc-oxide thin-film transistors with back-channel wet-etch process (pages 176–181)
Dongxiang Luo, Min Li, Miao Xu, Jiawei Pang, Yanli Zhang, Lang Wang, Hong Tao, Lei Wang, Jianhua Zou and Junbiao Peng
Version of Record online: 12 DEC 2013 | DOI: 10.1002/pssr.201308247
Amorphous indium-zinc-oxide thin film transistors (IZO-TFTs) with back-channel-etch (BCE) structure exhibit a poor bias stability, attributed to the formation of etching residues during the patterning of source/drain electrodes. The SF6 plasma generated by the plasma cleaner with direct plasma mode is employed to eliminate the etching residues. Compared to the as-fabricated device, the plasma treated BCE-TFT exhibits more stable behavior against the application of bias stress.