physica status solidi (RRL) - Rapid Research Letters

Cover image for Vol. 8 Issue 7

July 2014

Volume 8, Issue 7

Pages 611–667

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      Cover Picture: Atmospheric pressure chemical vapor deposition (APCVD) grown bi-layer graphene transistor characteristics at high temperature (Phys. Status Solidi RRL 7/2014)

      Ramy M. Qaisi, Casey E. Smith and Muhammad M. Hussain

      Version of Record online: 11 JUL 2014 | DOI: 10.1002/pssr.201470538

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      A low-cost and simple atmospheric chemical vapor deposition (APCVD) based double-layer graphene is used to study its transport phenomena at temperature as high as 250 °C. Beyond this temperature the fabricated graphene transistor fails to function, indicating areas of improvements related to dielectric engineering and device isolation. At the same time, it is interesting to note that such low band gap graphene operated fully even at gate current densities as high as 1 A/cm2 and channel current densities as high as 1 MA/cm2 at 250 °C. The study by Ramy M. Qaisi et al. (pp. 621–624) can be a cornerstone to explore graphene as an alternate low-cost material in place of traditional GaN and SiC based power devices for harsh environment application.

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      Back Cover: Micropatterned ZnO rod arrays prepared by Au-catalyzed electroless deposition (Phys. Status Solidi RRL 7/2014)

      Camelia Florica, Nicoleta Preda, Monica Enculescu and Ionut Enculescu

      Version of Record online: 11 JUL 2014 | DOI: 10.1002/pssr.201470539

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      ZnO nanostructures represent an interesting choice for the fabrication of optoelectronic micro/nanodevices. In their Letter on pp. 648–652, Camelia Florica et al. were using easily scalable, low-cost and highly reproducible techniques such as photolithography and electroless deposition in order to prepare ZnO functionalized micropatterns for applications in sensing and self-cleaning surfaces. The morphological, structural, optical, wetting and electrical properties of the ZnO rods arrays were investigated. A conversion from hydrophilic to superhydrophobic was observed for the samples, depending on the ZnO substrate covering. A change in ZnO samples electrical resistance was evidenced from current–voltage measurements after their exposure to ammonia, such micropatterned ZnO rod arrays being effective for designing microdevices for potential applications in various areas where chemical sensing or superhydrophobicity properties are required.

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      Issue Information: Phys. Status Solidi RRL 7/2014

      Version of Record online: 11 JUL 2014 | DOI: 10.1002/pssr.201470540

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  6. Rapid Research Letters

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    1. Graphene co-planar waveguides

      Physics-based modeling and microwave characterization of graphene co-planar waveguides (pages 617–620)

      Keun Heo, Kyung-Sang Cho, Jae Hyun Lee, Yamujin Jang, Sangsig Kim, Sung Woo Hwang and Dongmok Whang

      Version of Record online: 22 APR 2014 | DOI: 10.1002/pssr.201409104

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      Co-planar waveguides based on large-area mono-, bi-, and multi-layer graphenes were fabricated without a metal electrode and their high-frequency characteristics were evaluated via radio frequency (RF) measurement and modeling. Our results demonstrate that multi-layer graphene is an effective candidate in RF interconnect device applications.

    2. Graphene transistors

      Atmospheric pressure chemical vapor deposition (APCVD) grown bi-layer graphene transistor characteristics at high temperature (pages 621–624)

      Ramy M. Qaisi, Casey E. Smith and Muhammad M. Hussain

      Version of Record online: 15 MAY 2014 | DOI: 10.1002/pssr.201409100

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      Atmospheric pressure chemical vapor deposition grown graphene behavior at elevated temperature (250 °C) shows monotonic increase of gate leakage current which serves as principal reason for device failure suggesting that dielectric engineering and device isolation would improve the functionality at higher temperatures (>250 °C) for graphene devices.

    3. Field-effect transistors

      In–Ga–Zn–O MESFET with transparent amorphous Ru–Si–O Schottky barrier (pages 625–628)

      Jakub Kaczmarski, Jakub Grochowski, Eliana Kaminska, Andrzej Taube, Wojciech Jung and Anna Piotrowska

      Version of Record online: 9 MAY 2014 | DOI: 10.1002/pssr.201409124

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      The novel transparent amorphous material Ru–Si–O with high work function (5.3 eV) is utilized as rectifying Schottky contact to form gate electrode of metal–semiconductor field-effect transistors (MESFETs) with amorphous In–Ga–Zn–O active layer. Ru–Si–O/In–Ga–Zn–O structures are electrically and optically characterised. Our device operates in a narrow voltage range of 2 V, which makes it promising for use in low-power consumption transparent integrated circuits.

    4. Charge trapping memories

      Silicon nanoparticle charge trapping memory cell (pages 629–633)

      Nazek El-Atab, Ayse Ozcan, Sabri Alkis, Ali K. Okyay and Ammar Nayfeh

      Version of Record online: 12 MAY 2014 | DOI: 10.1002/pssr.201409157

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      ZnO-based charge trapping memory devices with 2 nm silicon nanoparticles are fabricated. By performing electrical characterization and studying the electric field across the tunnel oxide, Si nanoparticles as a charge trapping layer are shown to improve the memory window and the retention characteristic. Furthermore, the importance of the emission mechanism on the voltage needed to achieve the memory effect is analyzed.

    5. Resistive random access memory

      Experimental evaluation of the forming process of virgin HfO2 memory cells by capacitance–voltage measurements (pages 634–638)

      O. Khaldi, F. Jomni, P. Gonon, C. Vallée, C. Mannequin and B. Yangui

      Version of Record online: 29 APR 2014 | DOI: 10.1002/pssr.201409153

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      The authors report on the forming process of virgin HfO2 memory cells by capacitance–voltage measurements. The results show that after bias removal, both capacitance and conductance are affected. Such a degradation is observed after large stress duration and can be related to VO2+ filament formation. The degradation of the Au/HfO2/TiN metal–insulator–metal (MIM) devices is equivalent to resistive random access memory (RRAM) forming (required for resistive switching).

    6. 2D dichalcogenides

      Room-temperature photoluminescence in quasi-2D TlGaSe2 and TlInS2semiconductors (pages 639–642)

      Vytautas Grivickas, Karolis Gulbinas, Vladimir Gavryushin, Vitalijus Bikbajevas, Olga V. Korolik, Alexander V. Mazanik and Alexander K. Fedotov

      Version of Record online: 28 MAY 2014 | DOI: 10.1002/pssr.201409148

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      The photoluminescence in Tl dichalcogenides has been revealed by confocal spectroscopy at room temperature. It depends on the direction and polarization of the exciting light in respect of crystallographic crystal axis. Absorption depth dependence in the vicinity of the lateral crystal surface is found to be different from the bulk which leads to substantial PL and absorption enhancement.

    7. CeO2 micropillows

      Solvothermal synthesis of three-dimensional CeO2 micropillows and their photocatalytic property (pages 643–647)

      Narayanasamy Sabari Arul, Devanesan Mangalaraj and Jeong In Han

      Version of Record online: 22 MAY 2014 | DOI: 10.1002/pssr.201409200

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      Self-assembly of highly ordered hierarchical architectures of nanomaterials has attracted much attention due to their natural growth with a unique morphology and their potential applications. In particular, cerium oxide micropillows synthesized by solvothermal method showed enhanced photodegradation property towards azo dye acid orange 7 (AO7) under UV–visible light illumination.

    8. ZnO rod arrays

      Micropatterned ZnO rod arrays prepared by Au-catalyzed electroless deposition (pages 648–652)

      Camelia Florica, Nicoleta Preda, Monica Enculescu and Ionut Enculescu

      Version of Record online: 2 MAY 2014 | DOI: 10.1002/pssr.201409089

      Thumbnail image of graphical abstract

      Easy scalable, low cost and highly reproducible techniques such as photolithography and electroless deposition are used in order to fabricate ZnO functionalized micropatterns for applications in sensing and self-cleaning surfaces. Gold patterned catalytic surfaces represent the growth sites for ZnO hexagonal rods with tunable electrical and wetting properties proven by specific measurements described in this work.

    9. BiFeO3 nanofibers

      Simultaneous reduction in leakage current and enhancement in magnetic moment in BiFeO3 nanofibers via optimized Sn doping (pages 653–657)

      Qian Yang, Qiang Xu, Mushtaq Sobhan, Qingqing Ke, Franklin Anariba, Khuong P. Ong and Ping Wu

      Version of Record online: 2 MAY 2014 | DOI: 10.1002/pssr.201409043

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      In this Letter, the effect of Sn4+ doping on the magnetic and electrical properties in BiFeO3 nanofibers is investigated. Density functional theory (DFT) calculation shows that Sn prefers to occupy Fe site and acts as a shallow donor. It is demonstrated that Sn substitution enhances the magnetic property and lowers the leakage current in BiFeO3.

    10. InAs nanowires

      Self-catalysed growth of InAs nanowires on bare Si substrates by droplet epitaxy (pages 658–662)

      E. A. Anyebe, Q. Zhuang, A. M. Sanchez, S. Lawson, A. J. Robson, L. Ponomarenko, A. Zhukov and O. Kolosov

      Version of Record online: 22 APR 2014 | DOI: 10.1002/pssr.201409106

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      In this Letter, the self-catalysed growth of vertically aligned InAs nanowires on bare Si (111) by droplet epitaxy is presented. The diameter and density of the nanowires are well-defined by the predeposited Indium droplets. This technique holds enormous promise for the controllable, cost effective and time-efficient fabrication of functional monolithic hybrid structures of InAs nanowires on silicon.

    11. InP nanowires

      Photoluminescence blue shift of indium phosphide nanowire networks with aluminum oxide coating (pages 663–667)

      David M. Fryauf, Junce Zhang, Kate J. Norris, Juan J. Diaz Leon, Michael M. Oye, Min Wei and Nobuhiko P. Kobayashi

      Version of Record online: 5 MAY 2014 | DOI: 10.1002/pssr.201409008

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      Semiconductor nanowire optoelectronic properties are controlled by complex conditions of the fabrication method. This work demonstrates a post-growth mechanism of blue-shifting the photoluminescence spectra of an ensemble of nanowires. Indium phosphide nanowires were grown by MOCVD and coated with varying thicknesses of AlOx by plasma-enhanced ALD. Possible physical mechanisms of blue shift are discussed.

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