Self-catalysed growth of InAs nanowires on bare Si substrates by droplet epitaxy (pages 658–662)
E. A. Anyebe, Q. Zhuang, A. M. Sanchez, S. Lawson, A. J. Robson, L. Ponomarenko, A. Zhukov and O. Kolosov
Version of Record online: 22 APR 2014 | DOI: 10.1002/pssr.201409106
In this Letter, the self-catalysed growth of vertically aligned InAs nanowires on bare Si (111) by droplet epitaxy is presented. The diameter and density of the nanowires are well-defined by the predeposited Indium droplets. This technique holds enormous promise for the controllable, cost effective and time-efficient fabrication of functional monolithic hybrid structures of InAs nanowires on silicon.