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Impurity cluster effects in high- and low-doping semiconductor materials

Authors

  • A. Ferreira Da Silva

    Corresponding author
    1. Instituto de Física, Universidade Federal da Bahia, Campus Universitário de Ondina, 40210 340 Salvador, Bahia, Brazil
    • Instituto de Física, Universidade Federal da Bahia, Campus Universitário de Ondina, 40210 340 Salvador, Bahia, Brazil
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Abstract

The cluster-like impurity effect in semiconductor materials as Si, GaN, GaAs, and 4H[BOND]SiC for impurity concentrations spanning the metallic to the insulating regimes, i.e., from high- to low-doping concentration, has been investigated at low temperature. To metallic regime a critical impurity concentration for metal–nonmetal transition is estimated from a highly correlated system by a doubly doped Hmath image-like different impurity pairs. For insulating regime, the absorption measurements reveal low-energy absorption peaks identified as electronic transitions in three-donor clusters. The many-particle correlation via a multi-configurational self-consistent field model is used in the calculation. © 2010 Wiley Periodicals, Inc. Int J Quantum Chem, 2010

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