Effect of Electron Beam-Induced Deposition and Etching Under Bias
Article first published online: 27 JUN 2007
Copyright © 2007 Wiley Periodicals, Inc.
Volume 29, Issue 4, pages 171–176, July/August 2007
How to Cite
Choi, Y. R., Rack, P. D., Frost, B. and Joy, D. C. (2007), Effect of Electron Beam-Induced Deposition and Etching Under Bias. Scanning, 29: 171–176. doi: 10.1002/sca.20060
- Issue published online: 3 AUG 2007
- Article first published online: 27 JUN 2007
- Manuscript Accepted: 1 MAY 2007
- Manuscript Received: 15 FEB 2007
- electron-beam-induced deposition;
- electron-beam-induced etching;
- scanning electron microscope;
- precursor gas;
- secondary electron
Electron-beam-induced deposition (EBID) and etching (EBIE) provides a simple way to fabricate or etch submicron or nanoscale structures of various materials in a direct-write (i.e.nonlithographic) fashion. The growth rate or the etch rate are influenced by many factors such as beam energy, beam current, temperature of the substrate material, pressure of the chamber, and geometry of the gas injector etc.
The mechanism of EBID and EBIE involves the interaction of the incident electron beam or emitted electron from the target material. The role of these electrons is still not completely understood although the contribution of low energy secondary electrons (SE) has been assumed to be the dominant contributor of EBID and EBIE based on its overlap with the dissociation cross section. We have studied the growth and etching phenomenon under various biasing conditions to investigate how low voltage biasing of the substrate affects secondary electron trajectories and subsequently modifies electron-beam-induced deposition and etching.SCANNING 29: 000–000, 2007. © 2007 Wiley Periodicals, Inc.