Conditions for voltage contrast observation over passivated devices
Article first published online: 9 AUG 2011
Copyright © 1991 Foundation for Advances in Medicine and Science, Inc.
Volume 13, Issue 1, pages 11–14, 1991
How to Cite
Kodama, T., Koyama, N. and Uchikawa, Y. (1991), Conditions for voltage contrast observation over passivated devices. Scanning, 13: 11–14. doi: 10.1002/sca.4950130104
- Issue published online: 9 AUG 2011
- Article first published online: 9 AUG 2011
- Manuscript Received: 23 MAY 1990
Inspection of passivated microdevices using the scanning electron microscope (SEM) at a low primary electron energy has been increasingly studied. Previously we reported an empirical formula for conditions under which SEM observations over the passivation layer can be made without inducing serious charging disturbances. An investigation of charge balance between primary and secondary electrons was presented. The present work investigates the charging disturbance-free conditions of PSG, SiN, and Si3N4 passivated devices and how they are affected by beam irradiation. The storage time of the voltage contrast is measured for various values of primary electron energy and incident angle.