On the electrical properties of dislocations in ZnS using electric force microscopy
Version of Record online: 7 DEC 2006
Copyright © 2001 Wiley Periodicals, Inc.
Volume 23, Issue 3, pages 160–164, May/June 2001
How to Cite
Bai, G. F., Petrenko, V. F. and Baker, I. (2001), On the electrical properties of dislocations in ZnS using electric force microscopy. Scanning, 23: 160–164. doi: 10.1002/sca.4950230301
- Issue online: 7 DEC 2006
- Version of Record online: 7 DEC 2006
- Manuscript Accepted: 16 OCT 2000
- Manuscript Received: 10 AUG 2000
- National Science Foundation. Grant Number: DMR-9730304
- electric force microscopy;
- atomic force microscopy;
A combination of electric force microscopy (EFM) and noncontact atomic force microscopy (AFM) was used to study microscratching-induced dislocations in sphaleritic ZnS single crystals. Dislocation bands predominantly consisting of either anion-type (S) or cation-type (Zn) dislocations were induced by scratching along either  or  on a (110) surface. A significant difference of local distortions in electrical potential between the S(g) and Zn(g) dislocation bands was observed from the EFM images. Electric charges of these dislocations were determined quantitatively and the results were compared with theoretical models.