Growth and SIMS study of d.c.-sputtered indium oxide films on silicon
Article first published online: 31 JAN 2005
Copyright © 2005 John Wiley & Sons, Ltd.
Surface and Interface Analysis
Volume 37, Issue 3, pages 281–287, March 2005
How to Cite
Malar, P., Mohanty, B. C., Balamurugan, A.K., Rajagopalan, S., Tyagi, A.K. and Kasiviswanathan, S. (2005), Growth and SIMS study of d.c.-sputtered indium oxide films on silicon. Surf. Interface Anal., 37: 281–287. doi: 10.1002/sia.2016
- Issue published online: 16 FEB 2005
- Article first published online: 31 JAN 2005
- Manuscript Accepted: 20 OCT 2004
- Manuscript Revised: 18 OCT 2004
- Manuscript Received: 9 JUN 2004
- thin films;
- transmission electron microscopy;
Indium oxide thin films were grown onto Si and quartz substrates by d.c. reactive sputtering of elemental indium. X-ray diffraction and transmission electron microscopy studies confirmed the single-phase and polycrystalline nature of the films. Secondary ion mass spectrometry investigations of In2O3/Si structures showed the formation of an inhomogeneous interface region ∼20 nm thick between In2O3 and Si. The overall feature of the interface remained the same under annealing in an oxygen atmosphere, but annealing in an argon atmosphere drastically altered the nature of the interface. The observations indicate that interface formation and stability depend critically on the availability of oxygen. Copyright © 2005 John Wiley & Sons, Ltd.