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Research Article
Monte Carlo computations of the electron backscattering coefficient for bulk targets and surface thin films
Article first published online: 9 JAN 2008
DOI: 10.1002/sia.2637
Copyright © 2008 John Wiley & Sons, Ltd.
Issue
Surface and Interface Analysis
Special Issue: Papers Presented at ECASIA'07: The 12th European Conference on Applications of Surface and Interface Analysis, Brussels, Belgium, 9–14 September 2007
Volume 40, Issue 3-4, pages 714–717, March - April 2008
Additional Information
How to Cite
Dapor, M. (2008), Monte Carlo computations of the electron backscattering coefficient for bulk targets and surface thin films. Surface and Interface Analysis, 40: 714–717. doi: 10.1002/sia.2637
Publication History
- Issue published online: 20 MAR 2008
- Article first published online: 9 JAN 2008
- Manuscript Accepted: 15 OCT 2007
- Manuscript Revised: 13 OCT 2007
- Manuscript Received: 10 AUG 2007
- Abstract
- References
- Cited By
Keywords:
- impact phenomena;
- backscattering;
- Monte Carlo simulation;
- layered target
Abstract
Monte Carlo computations of the electron backscattering coefficient as a function of the primary energy in the range 500 eV–5 keV for several bulk targets (Al, Si, Cr, Ni, Cu, Ge, Au) are provided. Monte Carlo simulated backscattering coefficients from several surface thin layers are also provided as a function of the electron primary energy and film thicknesses. While the elastic scattering cross-sections have been calculated by the relativistic partial wave expansion method, the stopping power data utilized by the Monte Carlo code are taken from the literature. Copyright © 2008 John Wiley & Sons, Ltd.