Paper published as part of the ECASIA 2009 special issue.
Characterization of P3HT/PCBM bulk heterojunction photovoltaic devices using advanced secondary ion mass spectrometry techniques†
Article first published online: 29 MAR 2010
Copyright © 2010 John Wiley & Sons, Ltd.
Surface and Interface Analysis
Special Issue: ECASIA '09
Volume 42, Issue 6-7, pages 1010–1013, June - July 2010
How to Cite
Audinot, J.-N., Lévêque, P., Bechara, R., Leclerc, N., Guillot, J., Migeon, H.-N., Hadziioannou, G. and Heiser, T. (2010), Characterization of P3HT/PCBM bulk heterojunction photovoltaic devices using advanced secondary ion mass spectrometry techniques. Surf. Interface Anal., 42: 1010–1013. doi: 10.1002/sia.3359
- Issue published online: 17 JUN 2010
- Article first published online: 29 MAR 2010
- Manuscript Accepted: 8 FEB 2010
- Manuscript Revised: 2 FEB 2010
- Manuscript Received: 21 AUG 2009
- organic photovoltaic;
- organic film;
In this work, we applied low-impact energy secondary ion mass spectrometry (known as Sc-Ultra SIMS) and high lateral resolution (NanoSIMS50) to characterize the P3HT/PCBM (poly(3-hexylthiophene)/phenyl C61-butyric acid methyl ester bulk heterojunction photovoltaic (PV) devices. Here we report results obtained on Al/P3HT:PCBM/PEDOT:PSS/ITO (poly(3-hexylthiophene:phenyl C61-butyric acid methyl ester/poly(ethylene-dioxythiophene):poly(styrene sulfonate)/indium tin oxide) using advanced SIMS measurements to monitor 3D molecular compositions and metal/organic interface. The measurements have been performed on as-deposited as well as-annealed samples of Al/polymer interface. Blend macrophase separation and polymer/fullerene distribution have been investigated. Copyright © 2010 John Wiley & Sons, Ltd.