The effect of incident energy on molecular depth profiling of polymers with large Ar cluster ion beams

Authors

  • Satoshi Ninomiya,

    Corresponding author
    1. Quantum Science and Engineering Center, Kyoto University, Gokasho, Uji, 611-0011, Japan
    2. CREST, Japan Science and Technology Agency (JST), Chiyoda, Tokyo, 102-0075, Japan
    • Quantum Science and Engineering Center, Kyoto University, Gokasho, Uji, 611-0011, Japan.
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  • Kazuya Ichiki,

    1. Department of Nuclear Engineering, Kyoto University, Sakyo, Kyoto, 606-8501, Japan
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  • Hideaki Yamada,

    1. Department of Nuclear Engineering, Kyoto University, Sakyo, Kyoto, 606-8501, Japan
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  • Yoshihiko Nakata,

    1. Department of Nuclear Engineering, Kyoto University, Sakyo, Kyoto, 606-8501, Japan
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  • Toshio Seki,

    1. Department of Nuclear Engineering, Kyoto University, Sakyo, Kyoto, 606-8501, Japan
    2. CREST, Japan Science and Technology Agency (JST), Chiyoda, Tokyo, 102-0075, Japan
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  • Takaaki Aoki,

    1. Department of Electronic Science and Engineering, Kyoto University, Nishikyo, Kyoto, 615-8510, Japan
    2. CREST, Japan Science and Technology Agency (JST), Chiyoda, Tokyo, 102-0075, Japan
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  • Jiro Matsuo

    1. Quantum Science and Engineering Center, Kyoto University, Gokasho, Uji, 611-0011, Japan
    2. CREST, Japan Science and Technology Agency (JST), Chiyoda, Tokyo, 102-0075, Japan
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Abstract

In this study, we evaluated the damage caused by large Ar cluster ion irradiation on polymeric materials, and demonstrated a technique for molecular depth profiling of polymer films. The surface chemical states of the polymers were analyzed with XPS. The chemical states of the polymethyl methacrylate (PMMA) sample etched with Ar monomer ion beams differed significantly from those of the unirradiated sample, but were preserved for the sample etched with Ar cluster ion beams. SIMS depth profiling of the PMMA and polystyrene (PS) films were also carried out by using large Ar cluster ion beams at incident energies between 5.5 and 13 keV, and the effects of incident energy on damage accumulation and depth resolution were investigated. The ratios of the signal intensity at zero fluence to the signal intensity at steady state decreased with increasing incident energy, whereas the depth resolution was little affected by incident energy. Copyright © 2010 John Wiley & Sons, Ltd.

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