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SIMS-EDX system for the quantitative analysis of solids

Authors


Yu. Kudriavtsev, Sección Electrónica del Estado Solido, Departamento Ingeniería Eléctrica, CINVESTAV-IPN, Av. IPN #2508, México, DF 07360, México.

E-mail: yuriyk@cinvestav.mx

Abstract

We incorporated a Si drift X-ray detector into a Cameca ims-6f ion microprobe to perform a nondestructive energy-dispersive X-ray spectrometric analysis inside the SIMS instrument. Using thick AlxGa1−xN epitaxial layers and thin SixGe1−x films as examples, we demonstrate that integration of the EDX method (device) with the SIMS technique (instrument) can be extremely efficient for the quantitative analysis of complex materials. Copyright © 2012 John Wiley & Sons, Ltd.

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