Oxygen removal from raw silicon powder by the HF-ethanol solution etching
Article first published online: 20 NOV 2012
Copyright © 2012 John Wiley & Sons, Ltd.
Surface and Interface Analysis
Volume 45, Issue 6, pages 955–961, June 2013
How to Cite
Pan, K., Zhang, L., Wang, J., Lin, J. and Chen, G. (2013), Oxygen removal from raw silicon powder by the HF-ethanol solution etching. Surf. Interface Anal., 45: 955–961. doi: 10.1002/sia.5188
- Issue published online: 1 MAY 2013
- Article first published online: 20 NOV 2012
- Manuscript Accepted: 25 OCT 2012
- Manuscript Revised: 4 SEP 2012
- Manuscript Received: 4 DEC 2011
- Si oxides;
- ethanol addition;
- HF concentration;
Silicon powder is vulnerable to oxidation due to its high surface activity. The as-prepared Si powder is characterized by X-ray photoelectron spectroscopy spectra coupled with an oxygen nitrogen analyzer, revealing that oxygen impurities mainly consist of Si oxides but with a small amount of free oxygen. The stable oxide films can deteriorate the properties of sintered materials since they cannot be removed during sintering process. The cleaning of these oxides by a single-HF solution is not straightforward and efficient due to the large surface tension. To remove the oxygen, a more efficient way with the addition of ethanol to a HF solution has been proposed. The addition of a moderate percent of ethanol can decrease the water contact angle and then improve the cleaning efficiency. Importantly, the resulting Si powder possesses good dispersity, uniformity and fluidity. However, excess hydrofluoric acid suppresses oxide removal. Copyright © 2012 John Wiley & Sons, Ltd.