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Study of the electron standing wave states in scanning tunneling spectroscopy of Si(111) surface

Authors

  • Kun Xue,

    Corresponding author
    1. Australia Research Council Centre of Excellence for Quantum Computation and Communication Technology and School of Physics, University of New South Wales, Sydney, Australia
    • Department of Electronic Engineering and Material Science and Technology Research Center, The Chinese University of Hong Kong, Shatin, N.T., Hong Kong SAR
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  • Ruzhi Wang,

    1. Laboratory of Thin Film Materials, School of Materials Science and Engineering, Beijing University of Technology, Beijing, People's Republic of China
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  • Ho-pui Ho,

    1. Department of Electronic Engineering and Material Science and Technology Research Center, The Chinese University of Hong Kong, Shatin, N.T., Hong Kong SAR
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  • Jianbin Xu

    Corresponding author
    • Department of Electronic Engineering and Material Science and Technology Research Center, The Chinese University of Hong Kong, Shatin, N.T., Hong Kong SAR
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Correspondence to: Kun Xue, Atomic Fabrication Facility, CQC2T, UNSW, Sydney, Australia.

E-mail: kxue@ee.cuhk.edu.hk

Jianbin Xu, Electronic Engineering Deptartment, CUHK, Hong Kong.

E-mail: jbxu@ee.cuhk.edu.hk

Abstract

Electron standing wave (ESW) states excited in the vacuum gap near sample surface by operating the scanning tunneling microscopy in field emission regime have been widely used to probe the local electronic properties of novel materials and structures. For accurate interpretation of the ESW states spectra, a simple numerical approach is developed based on a one-dimensional model, and the transmission coefficient is accurately calculated using the transfer matrix method. Effects correlated with the potential distribution in the tunneling gap are discussed. By this method, main features of the experimental spectra obtained on Si(111)7 × 7 surfaces are successfully simulated. Factors affecting the spectra are discussed. Copyright © 2012 John Wiley & Sons, Ltd.

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