SIMS proceedings paper
Investigation of Cs surface layer formation in Cs-SIMS with TOF-MEIS and SIMS
Article first published online: 23 JUN 2014
Copyright © 2014 John Wiley & Sons, Ltd.
Surface and Interface Analysis
Special Issue: Proceedings of the Nineteenth International Conference on Secondary Ion Mass Spectrometry, SIMS XIX, Jeju, Korea, September 29–October 4, 2013
Volume 46, Issue S1, pages 22–24, November 2014
How to Cite
2014) Investigation of Cs surface layer formation in Cs-SIMS with TOF-MEIS and SIMS, Surf. Interface Anal., 46, pages 22–24, doi: 10.1002/sia.5614., , , , and (
- Issue published online: 25 NOV 2014
- Article first published online: 23 JUN 2014
- Manuscript Accepted: 3 JUN 2014
- Manuscript Revised: 28 MAY 2014
- Manuscript Received: 24 OCT 2013
- depth profiling;
In this report, cesium surface layers formed by Cs+ ion bombardment on silicon and phenylalanine (Phe) samples were analyzed by TOF-MEIS and ToF-SIMS. Si wafers were bombarded with 500 eV Cs+ ions, then were subsequently bombarded with five different Cs+ fluences corresponding to the transient and equilibrium regimes. The Phe layers were evaporated on Si wafers, up to 100 nm thickness. The samples were subsequently bombarded at four different fluences. For Phe, TOF-MEIS shows the formation of a sharp Cs surface layer of ~0.5 nm thickness, on which the peak height increases with Cs+ ion bombardment and a long Cs tail builds up, penetrating deep into the subsurface. For Si, a similar Cs surface peak forms, but it saturates quickly compared to Phe. Copyright © 2014 John Wiley & Sons, Ltd.