Special issue article
Self-accelerating oxidation on Si(111)7 × 7 surfaces studied by real-time photoelectron spectroscopy
Article first published online: 24 JUN 2014
Copyright © 2014 John Wiley & Sons, Ltd.
Surface and Interface Analysis
How to Cite
Tang, J., Nishimoto, K., Ogawa, S., Akitaka, Y., Ishidzuka, S., Watanabe, D., Teraoka, Y. and Takakuwa, Y. (2014), Self-accelerating oxidation on Si(111)7 × 7 surfaces studied by real-time photoelectron spectroscopy. Surf. Interface Anal.. doi: 10.1002/sia.5615
- Article first published online: 24 JUN 2014
- Manuscript Received: 2 JUN 2014
- Manuscript Accepted: 2 JUN 2014
- interface oxidation;
- real-time photoelectron spectroscopy;
- interface strain;
- Si(111)7 × 7
Oxidation at the oxide/Si(111) interface at room temperature (RT) and 550 °C has been investigated by real-time X-ray photoelectron spectroscopy. Self-accelerating interface oxidation is observed in oxidation at RT, but not in oxidation at 550 °C. During self-acceleration at RT, the component corresponding to strained Si atoms in the second layer below the oxide/Si(111) interface, Siβ, increases significantly. It is suggested that the interface oxidation rate is strongly correlated with the generation of strain at the oxide/Si(111) interface. Furthermore, a self-accelerating interface oxidation model of Si(111)7 × 7 surfaces that includes the point defect (emitted Si atoms + vacancies) generation is proposed. Copyright © 2014 John Wiley & Sons, Ltd.