XPS study of the a-C : H/Al2O3 interface
Article first published online: 15 SEP 2004
Copyright © 1994 John Wiley & Sons Ltd.
Surface and Interface Analysis
Volume 21, Issue 1, pages 32–37, January 1994
How to Cite
Ernst, K.-H., Patscheider, J., Hauert, R. and Tobler, M. (1994), XPS study of the a-C : H/Al2O3 interface. Surf. Interface Anal., 21: 32–37. doi: 10.1002/sia.740210105
- Issue published online: 15 SEP 2004
- Article first published online: 15 SEP 2004
- Manuscript Accepted: 5 JUL 1993
- Manuscript Received: 29 APR 1993
The interface between diamond-like amorphous hydrogenated carbon (a-C : H) and Al2O3 was analysed by sputter depth profile analysis via x-ray photoelectron spectroscopy. X-ray photoelectron spectra were also recorded during direct ion beam deposition (CH4, E = 400 eV) monitoring the initial build-up of the interface. No stoichiometric interface compound was detected, although Al2O3 is reduced to Al2O3-x (x ∼ 0.5–1) enabling an interaction with the carbon atoms. This results in an excellent adhesion of a-C : H to the chemically inert Al2O3.