Nanowires for Integrated Multicolor Nanophotonics

Graphical Abstract

Nanoscale light-emitting diodes and arrays with colors spanning the ultraviolet to near-infrared region were prepared by assembling emissive electron-doped semiconductor nanowires (NWs) with nonemissive hole-doped silicon NWs in a crossed architecture (see picture). Electronic and photonic devices were combined to give integrated structures, and generalized to produce hybrid devices in which NW emitters were assembled on lithographically patterned planar silicon.

Abstract

Nanoscale light-emitting diodes (nanoLEDs) with colors spanning from the ultraviolet to near-infrared region of the electromagnetic spectrum were prepared using a solution-based approach in which emissive electron-doped semiconductor nanowires were assembled with nonemissive hole-doped silicon nanowires in a crossed nanowire architecture. Single- and multicolor nanoLED devices and arrays were made with colors specified in a predictable way by the bandgaps of the III–V and II–VI nanowire building blocks. The approach was extended to combine nanoscale electronic and photonic devices into integrated structures, where a nanoscale transistor was used to switch the nanoLED on and off. In addition, this approach was generalized to hybrid devices consisting of nanowire emitters assembled on lithographically patterned planar silicon structures, which could provide a route for integrating photonic devices with conventional silicon microelectronics. Lastly, nanoLEDs were used to optically excite emissive molecules and nanoclusters, and hence could enable a range of integrated sensor/detection “chips” with multiplexed analysis capabilities.