Crystallography and Surface Faceting of Germanium Nanowires

Authors

  • Tobias Hanrath Dr.,

    1. Department of Chemical Engineering, Texas Materials Institute, Center for Nano- and Molecular Science and Technology, The University of Texas at Austin, Austin, TX 78712-1062, USA, Fax: (+1) 512-471-7060
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  • Brian A. Korgel Prof.

    1. Department of Chemical Engineering, Texas Materials Institute, Center for Nano- and Molecular Science and Technology, The University of Texas at Austin, Austin, TX 78712-1062, USA, Fax: (+1) 512-471-7060
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  • We thank Alain Diebold and Miguel José Yacamán for insightful discussions and Dwight Romanovicz for help in preparing the cross-sectional samples. We acknowledge funding from the National Science Foundation, the Welch Foundation, and the Advanced Materials Research Center (AMRC) in collaboration with International SEMATECH.

Abstract

original image

Key crystallographic aspects of Ge nanowires grown in a supercritical fluid were investigated by high-resolution transmission electron microscopy. The favored <110> growth direction was attributed to the crystallographic faceting of low-energy {111} and {100} planes on the initial nucleus crystal and the exposed nanowire sidewall surfaces. Electron diffraction patterns of individual nanowires exhibited forbidden 1/3 {422} reflections due to incomplete {111} surface facets and the finite size of the nanowires.

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