V.S. is permanently located at the MPI in Halle but worked as a visiting scientist at the IBM Zurich Research Laboratory, where this work was carried out.
Realization of a Silicon Nanowire Vertical Surround-Gate Field-Effect Transistor
Version of Record online: 7 NOV 2005
Copyright © 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Volume 2, Issue 1, pages 85–88, January 2006
How to Cite
Schmidt, V., Riel, H., Senz, S., Karg, S., Riess, W. and Gösele, U. (2006), Realization of a Silicon Nanowire Vertical Surround-Gate Field-Effect Transistor. Small, 2: 85–88. doi: 10.1002/smll.200500181
- Issue online: 5 DEC 2005
- Version of Record online: 7 NOV 2005
- Manuscript Revised: 1 AUG 2005
- Manuscript Received: 1 JUN 2005
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