Communication

Self-Organization of InAs Quantum-Dot Clusters Directed by Droplet Homoepitaxy

  1. Zhiming M. Wang Dr.,
  2. Baolai Liang,
  3. Kimberly A. Sablon,
  4. Jihoon Lee,
  5. Yuriy I. Mazur Dr.,
  6. Neil W. Strom,
  7. Gregory J. Salamo Dr.

Article first published online: 8 JAN 2007

DOI: 10.1002/smll.200600330

Issue

Small

Small

Volume 3, Issue 2, pages 235–238, February 5, 2007

Additional Information

How to Cite

Wang, Z., Liang, B., Sablon, K., Lee, J., Mazur, Y., Strom, N. and Salamo, G. (2007), Self-Organization of InAs Quantum-Dot Clusters Directed by Droplet Homoepitaxy. Small, 3: 235–238. doi: 10.1002/smll.200600330

Author Information

  1. Department of Physics, University of Arkansas, Fayetteville, AR 72701, USA, Fax: (+1) 479-575-4217

Publication History

  1. Issue published online: 29 JAN 2007
  2. Article first published online: 8 JAN 2007
  3. Manuscript Received: 6 JUL 2006

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Keywords:

  • epitaxy;
  • nanostructures;
  • quantum dots;
  • self-assembly;
  • semiconductors

Graphical Abstract

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Dotty structures: Ga droplets are formed by Ga flux and allowed to react with an As molecular flux; the droplet-homoepitaxy approach is then used to structure the GaAs(100) surface at the nanometer scale. GaAs nanoscale mounds elongated along the [01equation image] direction are observed. Subsequent deposition of InAs leads to the formation of quantum-dot clusters around the GaAs mounds (see image).

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