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ZnO-Nanowire-Inserted GaN/ZnO Heterojunction Light-Emitting Diodes

Authors

  • Min-Chang Jeong,

    1. Information and Electronic Materials Research Laboratory, Department of Materials Science and Engineering, Yonsei University,134 Shinchon-Dong, Seoul 120-749, Korea, Fax: (+82) 2-365-2680
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  • Byeong-Yun Oh,

    1. Information and Electronic Materials Research Laboratory, Department of Materials Science and Engineering, Yonsei University,134 Shinchon-Dong, Seoul 120-749, Korea, Fax: (+82) 2-365-2680
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  • Moon-Ho Ham,

    1. Information and Electronic Materials Research Laboratory, Department of Materials Science and Engineering, Yonsei University,134 Shinchon-Dong, Seoul 120-749, Korea, Fax: (+82) 2-365-2680
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  • Sang-Won Lee,

    1. Information and Electronic Materials Research Laboratory, Department of Materials Science and Engineering, Yonsei University,134 Shinchon-Dong, Seoul 120-749, Korea, Fax: (+82) 2-365-2680
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  • Jae-Min Myoung Prof.

    1. Information and Electronic Materials Research Laboratory, Department of Materials Science and Engineering, Yonsei University,134 Shinchon-Dong, Seoul 120-749, Korea, Fax: (+82) 2-365-2680
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  • This research was supported by the Second Stage of Brain Korea 21 Project 2006, and the L.G. Philips LCD academic–industrial cooperation program.

Abstract

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Out of the blue: Light-emitting diodes were obtained by fabricating p+-GaN film/n-ZnO nanowire array/n+-ZnO film structures (see figure). Blue electroluminescence (EL) emission was observed from the nanowire-inserted heterojunction diodes under forward bias. These diodes exhibited improved EL emission and injection current compared to those of film-based heterojunction diodes.

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