Communication

Realization of Atomically Controlled Dopant Devices in Silicon†

  1. Frank J. Rueß Dr.1,
  2. Wilson Pok2,
  3. Thilo C. G. Reusch Dr.1,
  4. Matthew J. Butcher Dr.2,
  5. Kuan Eng J. Goh Dr.1,
  6. Lars Oberbeck Dr.1,
  7. Giordano Scappucci Dr.1,
  8. Alex R. Hamilton Prof.2,
  9. Michelle Y. Simmons Prof.1,2

Article first published online: 6 MAR 2007

DOI: 10.1002/smll.200600680

Issue

Small

Small

Volume 3, Issue 4, pages 563–567, April 2, 2007

Additional Information

How to Cite

Rueß, F., Pok, W., Reusch, T. C., Butcher, M., Goh, K. E., Oberbeck, L., Scappucci, G., Hamilton, A. and Simmons, M. (2007), Realization of Atomically Controlled Dopant Devices in Silicon. Small, 3: 563–567. doi: 10.1002/smll.200600680

Author Information

  1. 1

    Australian Research Council, Centre of Excellence for Quantum Computer Technology, University of New South Wales, Sydney, NSW 2052, Australia

  2. 2

    School of Physics, University of New South Wales, Sydney, NSW 2052, Australia, Fax: (+61) 2-9385-6138

  1. †

    This work was supported by the Australian Research Council, the Australian Government, the US Advanced Research and Development Activity, National Security Agency, and Army Research Office under contract DAAD19-01-1-0653, and the Semiconductor Research Corporation (SRC). M.Y.S. acknowledges an Australian Government Federation Fellowship. F.J.R. acknowledges 3D graphics support from H. Holzapfel at www.ScienceImage.eu.

Publication History

  1. Issue published online: 22 MAR 2007
  2. Article first published online: 6 MAR 2007
  3. Manuscript Received: 2 DEC 2006

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Keywords:

  • doping;
  • molecular beam epitaxy;
  • nanostructures;
  • scanning probe microscopy;
  • silicon

Graphical Abstract

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Molecular beam epitaxy and scanning tunneling microscopy (STM) patterning are combined to form highly doped, planar devices in silicon at the atomic level. The absolute device location is registered to microscopic markers (see image; scale bar: 50 μm) for the alignment of surface contacts, enabling the correlation of the electrical properties of atomically controlled devices such as nanowires, tunnel junctions, and nanodots to the dopant location, monitored using high-resolution STM techniques.

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