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A Chemically Amplified Fullerene-Derivative Molecular Electron-Beam Resist

  1. Francis Gibbons1,
  2. Hasnah M. Zaid Dr.1,
  3. Mayandithevar Manickam Dr.2,
  4. Jon A. Preece Prof.2,
  5. Richard E. Palmer Prof.1,
  6. Alex P. G. Robinson Dr.1

Article first published online: 15 NOV 2007

DOI: 10.1002/smll.200700324

Issue

Small

Small

Volume 3, Issue 12, pages 2076–2080, December 3, 2007

Additional Information

How to Cite

Gibbons, F., Zaid, Hasnah M., Manickam, M., Preece, Jon A., Palmer, Richard E. and Robinson, A. P. G. (2007), A Chemically Amplified Fullerene-Derivative Molecular Electron-Beam Resist. Small, 3: 2076–2080. doi: 10.1002/smll.200700324

Author Information

  1. 1

    Nanoscale Physics Research Laboratory, School of Physics and Astronomy, The University of Birmingham, Edgbaston, Birmingham B15 2TT, UK, Fax: (+44) 121-414-7327

  2. 2

    School of Chemistry, The University of Birmingham, Edgbaston, Birmingham, B15 2TT, UK

Publication History

  1. Issue published online: 4 DEC 2007
  2. Article first published online: 15 NOV 2007
  3. Manuscript Received: 10 MAY 2007

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Keywords:

  • chemical amplification;
  • electron beams;
  • fullerenes;
  • lithography;
  • resists

Abstract

Current lithographic resists depend on large polymeric materials, which are starting to limit further improvements in line-width roughness and feature size. Fullerene molecular resists use much smaller molecules to avoid this problem. However, such resists have poor radiation sensitivity. Chemical amplification of a fullerene derivative using an epoxy crosslinker and a photoacid generator is demonstrated. The sensitivity of the material is increased by two orders of magnitude, and 20-nm line widths are patterned.

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