This work was supported in part by the Deutsche Forschungsgemeinschaft (DFG) within the priority program 1121.
Electronic-Band-Structure Mapping of Nanotube Transistors by Scanning Photocurrent Microscopy†
Article first published online: 20 NOV 2007
Copyright © 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Volume 3, Issue 12, pages 2038–2042, December 3, 2007
How to Cite
Lee, E. J. H., Balasubramanian, K., Dorfmüller, J., Vogelgesang, R., Fu, N., Mews, A., Burghard, M. and Kern, K. (2007), Electronic-Band-Structure Mapping of Nanotube Transistors by Scanning Photocurrent Microscopy. Small, 3: 2038–2042. doi: 10.1002/smll.200700418
- Issue published online: 4 DEC 2007
- Article first published online: 20 NOV 2007
- Manuscript Revised: 28 SEP 2007
- Manuscript Received: 15 JUN 2007
- carbon nanotubes;
- field-effect transistors;
Carbon-nanotube field-effect transistors are characterised using scanning photocurrent microscopy. The photocurrent response (see image), reflecting the strength of the local built-in electric field, depends on the applied source–drain bias and the charge-transport regime adjusted by the back-gate voltage. Such measurements enable the extraction of electronic band-structure profiles corresponding to the different operation conditions.