Fabrication of Suspended Silicon Nanowire Arrays

Authors


  • The authors acknowledge support from the Research Program of the Korea Electronics Technology Institute (KETI) granted by the Ministry of Commerce, Industry and Energy (MOCIE), Republic of Korea.

Abstract

A method to fabricate suspended silicon nanowires that are applicable to electronic and electromechanical nanowire devices is reported. The method allows for the wafer-level production of suspended silicon nanowires using anisotropic etching and thermal oxidation of single-crystal silicon. The deviation in width of the silicon nanowire bridges produced using the proposed method is evaluated. The NW field-effect transistor (FET) properties of the device obtained by transferring suspended nanowires are shown to be practical for useful functions.

Ancillary