This paper is based on work supported by the Air Force Office of Scientific Research, the National Science Foundation (DMR 0520567), and the American Chemical Society Petroleum Research Fund. D.S.G. also thanks the Camille Dreyfus Teacher-Scholar Awards Program for support. D.S.G. is a Cottrell Scholar of the Research Corporation and an Alfred P. Sloan Foundation Research Fellow. The authors thank Keiko Munechika for her assistance in scanning electron microscopy imaging and Melvin Zin and Kirsty Leong for providing PDMS stamps. Scanning electron microscope images were taken at the UW NanoTech User Facility, which is part of the National Science Foundation National Nanotechnology Infrastructure Network.
A Direct-Write Single-Step Positive Etch Resist for Dip-Pen Nanolithography†
Article first published online: 4 DEC 2007
Copyright © 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Volume 3, Issue 12, pages 2034–2037, December 3, 2007
How to Cite
Wei, Joseph H. and Ginger, David S. (2007), A Direct-Write Single-Step Positive Etch Resist for Dip-Pen Nanolithography. Small, 3: 2034–2037. doi: 10.1002/smll.200700617
- Issue published online: 4 DEC 2007
- Article first published online: 4 DEC 2007
- Manuscript Received: 31 JUL 2007
- Dip-pen nanolithography;
- microcontact printing;
- self-assembled monolayers
Dip-pen nanolithography is used to deposit 1-octadecylamine (ODA) as a positive etch resist on gold substrates and then passivate the unpatterned regions with 1-octadecanethiol (ODT). Selective etching of the ODA-patterned features is achieved to generate nanoholes without the need for any electrochemical desorption steps (see image). Patterns are formed due to the faster etching rates of the ODA-patterned areas compared with the ODT-covered regions in a thiourea and ferric nitrate etching solution.