The authors kindly thank Max Bichler and Carlo Colombo for helpful discussions on the MBE growth, and Dirk Grundler for making the SEM available. This research was supported by Marie Curie Excellence Grant “SENFED” and by the DFG Excellence Cluster Nanosystems Initiative München. The SFB 631 and Nanoquit initiatives are also acknowledged.
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Communication
Prismatic Quantum Heterostructures Synthesized on Molecular-Beam Epitaxy GaAs Nanowires†
Article first published online: 26 MAY 2008
DOI: 10.1002/smll.200701091
Copyright © 2008 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim
Additional Information
How to Cite
Fontcuberta i Morral, A., Spirkoska, D., Arbiol, J., Heigoldt, M., Morante, J. R. and Abstreiter, G. (2008), Prismatic Quantum Heterostructures Synthesized on Molecular-Beam Epitaxy GaAs Nanowires. Small, 4: 899–903. doi: 10.1002/smll.200701091
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Publication History
- Issue published online: 11 JUL 2008
- Article first published online: 26 MAY 2008
- Manuscript Received: 9 NOV 2007
- Abstract
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- References
- Cited By
Keywords:
- molecular beam epitaxy;
- nanowires;
- photoluminescence;
- quantum wells
Graphical Abstract
GaAs nanowires are synthesized by molecular-beam epitaxy (MBE) without using gold as a nucleation seed. The synthesis can be tuned from 1D to 2D by changing the MBE growth conditions. This allows the deposition of quasi 1D quantum wells on the nanometer-wide facets of the nanowires, resulting in a prismatic geometry (see image).