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Controlling Charge-Carrier Type in Nanoscale Junctions with Linker Chemistry

Authors

  • Christopher D. Zangmeister,

    Corresponding author
    1. Chemical Science and Technology Laboratory, National Institute of Standards and Technology, Gaithersburg, MD 20899 (USA)
    • Chemical Science and Technology Laboratory, National Institute of Standards and Technology, Gaithersburg, MD 20899 (USA).
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  • Jeremy M. Beebe,

    1. Chemical Science and Technology Laboratory, National Institute of Standards and Technology, Gaithersburg, MD 20899 (USA)
    2. Current address: Dow Corning Corporation, Midland, MI 48686 (USA)
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  • Jawad Naciri,

    1. Center for Bio-Molecular Science and Engineering, Naval Research Laboratory, Washington, DC 20375 (USA)
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  • James G. Kushmerick,

    1. Chemical Science and Technology Laboratory, National Institute of Standards and Technology, Gaithersburg, MD 20899 (USA)
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  • Roger D. van Zee

    1. Chemical Science and Technology Laboratory, National Institute of Standards and Technology, Gaithersburg, MD 20899 (USA)
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Abstract

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In charge: The energy-level alignment and change to the surface work function (Δφ, see picture) are measured for 4,4′-bis(phenylethynyl)benzeneisocyanide monolayers chemisorbed on metalsurfaces. Tunneling-barrier heights areextracted from current–voltage measurements of nanoscale junctions. Linking chemistry modifies the interfacial electrostatic potential and allows control of the dominant charge-carrier type.

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