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Full Paper
Site-Controlled InGaAs Quantum Dots with Tunable Emission Energy
Article first published online: 23 FEB 2009
DOI: 10.1002/smll.200801274
Copyright © 2009 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim
Additional Information
How to Cite
Felici, M., Gallo, P., Mohan, A., Dwir, B., Rudra, A. and Kapon, E. (2009), Site-Controlled InGaAs Quantum Dots with Tunable Emission Energy. Small, 5: 938–943. doi: 10.1002/smll.200801274
Publication History
- Issue published online: 8 APR 2009
- Article first published online: 23 FEB 2009
- Manuscript Revised: 25 NOV 2008
- Manuscript Received: 1 SEP 2008
- Abstract
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Keywords:
- crystal growth;
- pattern formation;
- photonics;
- quantum dots;
- semiconductors
Abstract
Semiconductor quantum-dot (QD) systems offering perfect site control and tunable emission energy are essential for numerous nanophotonic device applications involving spatial and spectral matching of dots with optical cavities. Herein, the properties of ordered InGaAs/GaAs QDs grown by organometallic chemical vapor deposition on substrates patterned with pyramidal recesses are reported. The seeded growth of a single QD inside each pyramid results in near-perfect (<10 nm) control of the QD position. Moreover, efficient and uniform photoluminescence (inhomogeneous broadening <10 meV) is observed from ordered arrays of such dots. The QD emission energy can be finely tuned by varying 1) the pyramid size and 2) its position within specific patterns. This tunability is brought about by the patterning of both the chemical properties and the surface curvature features of the substrate, which allows local control of the adatom fluxes that determine the QD thickness and composition.