M. K. thanks the NSF NIRT (ECS-0609249) and CAREER (CHE-0547784) programs for funding. We thank the University of Notre Dame and the Notre Dame Radiation Laboratory/DOE Office of Basic Energy Sciences for financial support and for use of their facilities. We also thank Simon Lee and Yanghai Yu for assistance in the elemental analysis of the nanowires. M. K. is a Cottrell Scholar of Research Corporation.
Facile Synthesis and Size Control of II–VI Nanowires Using Bismuth Salts†
Article first published online: 30 MAR 2009
Copyright © 2009 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim
Volume 5, Issue 10, pages 1112–1116, May 18, 2009
How to Cite
Puthussery, J., Kosel, T. H. and Kuno, M. (2009), Facile Synthesis and Size Control of II–VI Nanowires Using Bismuth Salts. Small, 5: 1112–1116. doi: 10.1002/smll.200801838
- Issue published online: 7 MAY 2009
- Article first published online: 30 MAR 2009
- Manuscript Revised: 26 FEB 2009
- Manuscript Received: 9 DEC 2008
- University of Notre Dame
- Notre Dame Radiation Laboratory/DOE Office of Basic Energy Sciences
High-aspect-ratio II–VI semiconductor nanowires (NWs; see image) are prepared using solution–liquid–solid growth employing simple Bi salts. NW size control is achieved by varying the Bi content of the preparation, leading to wire diameters between 5 and 11 nm. Corresponding size-dependent trends are seen in the linear absorption/band-edge emission of the wires, suggesting carrier confinement.