Full Paper

How Does Graphene Grow? Easy Access to Well-Ordered Graphene Films

  1. Frank Müller1,2,
  2. Hermann Sachdev1,*,
  3. Stefan Hüfner2,
  4. Andrew J. Pollard3,
  5. Edward W. Perkins3,
  6. James C. Russell3,
  7. Peter H. Beton3,
  8. Stefan Gsell4,
  9. Martin Fischer4,
  10. Matthias Schreck4,
  11. Bernd Stritzker4

Article first published online: 29 JUN 2009

DOI: 10.1002/smll.200900158

Issue

Small

Small

Volume 5, Issue 20, pages 2291–2296, October 16, 2009

Additional Information

How to Cite

Müller, F., Sachdev, H., Hüfner, S., Pollard, A. J., Perkins, E. W., Russell, J. C., Beton, P. H., Gsell, S., Fischer, M., Schreck, M. and Stritzker, B. (2009), How Does Graphene Grow? Easy Access to Well-Ordered Graphene Films. Small, 5: 2291–2296. doi: 10.1002/smll.200900158

Author Information

  1. 1

    Anorganische und Allgemeine Chemie FR 8.1 Naturwissenschaftlich-Technische Fakultät III Chemie, Pharmazie und Werkstoffwissenschaften Universität des Saarlandes C4.1 66041 Saarbrücken (Germany)

  2. 2

    Institut für Experimentalphysik Naturwissenschaftlich-Technische Fakultät II Physik und Mechatronik Universität des Saarlandes 66041 Saarbrücken (Germany)

  3. 3

    School of Physics and Astronomy, University of Nottingham University Park, Nottingham, NG7 2RD (UK)

  4. 4

    Institut für Physik, Lehrstuhl für Experimentalphysik IV Universität Augsburg Universitätsstaße 1 86135 Augsburg (Germany)

*Anorganische und Allgemeine Chemie FR 8.1 Naturwissenschaftlich-Technische Fakultät III Chemie, Pharmazie und Werkstoffwissenschaften Universität des Saarlandes C4.1 66041 Saarbrücken (Germany).

Publication History

  1. Issue published online: 12 OCT 2009
  2. Article first published online: 29 JUN 2009
  3. Manuscript Revised: 15 MAY 2009
  4. Manuscript Received: 28 JAN 2009

Funded by

  • UK Engineering and Physical Science Research Council. Grant Numbers: EP/C534158/1, EP/D048761/1

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Keywords:

  • epitaxy;
  • graphene;
  • monolayers;
  • self-assembly;
  • surface analysis

Graphical Abstract

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The formation of highly oriented graphene superstructures on silicon-based epitaxial Rh(111) films is investigated for different CxHyOz species (see image). A detailed study of the graphene formation from selected carbon sources as precursors indicates that dicarbon species are responsible for the graphene layer formation. This new approach provides easy access to high-quality graphene films on transition-metal layers grown on 4-in. silicon wafers.

Abstract

The selective formation of large-scale graphene layers on a Rh-YSZ-Si(111) multilayer substrate by a surface-induced chemical growth mechanism is investigated using low-energy electron diffraction, X-ray photoelectron spectroscopy, X-ray photoelectron diffraction, and scanning tunneling microscopy. It is shown that well-ordered graphene layers can be grown using simple and controllable procedures. In addition, temperature-dependent experiments provide insight into the details of the growth mechanisms. A comparison of different precursors shows that a mobile dicarbon species (e.g., C2H2 or C2) acts as a common intermediate for graphene formation. These new approaches offer scalable methods for the large-scale production of high-quality graphene layers on silicon-based multilayer substrates.

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