Work at NU was funded by the ARO through grant No. W911NF-06-1-0344. D.A.D. was partially funded from the DARPA-MTO iMINT Center (Award HR0011-06-1-0048). Authors acknowledge support of the Center for Nanoscale Materials (CNM) at Argonne National Laboratory. Use of the CNM was supported by the U. S. Department of Energy, Office of Science, Office of Basic Energy Sciences, under Contract No. DE-AC02-06CH11357. The authors also thank A. Carter and R. Koltun for help in fabricating the alphabetical fiduciary arrays by electron beam lithography and help with graphics.
Controllable Patterning and CVD Growth of Isolated Carbon Nanotubes with Direct Parallel Writing of Catalyst Using Dip-Pen Nanolithography†
Article first published online: 13 OCT 2009
Copyright © 2009 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim
Volume 5, Issue 22, pages 2523–2527, November 16, 2009
How to Cite
Kuljanishvili, I., Dikin, D. A., Rozhok, S., Mayle, S. and Chandrasekhar, V. (2009), Controllable Patterning and CVD Growth of Isolated Carbon Nanotubes with Direct Parallel Writing of Catalyst Using Dip-Pen Nanolithography. Small, 5: 2523–2527. doi: 10.1002/smll.200900841
- Issue published online: 11 NOV 2009
- Article first published online: 13 OCT 2009
- Manuscript Received: 19 MAY 2009
- ARO. Grant Number: W911NF-06-1-0344
- carbon nanotubes;
- catalyst nanoparticles;
- chemical vapor deposition;
- dip-pen nanolithography
Carbon nanotubes are fabricated using chemical vapor deposition at predetermined locations by patterning catalyst directly on a substrate with nanometer-scale precision using dip-pen nanolithography with multipen cantilevers (see image). The development of new molecular inks for the deposition of the precursor catalyst results in a high yield of isolated carbon nanotubes, ideal for subsequent device fabrication.