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Probing Layer Number and Stacking Order of Few-Layer Graphene by Raman Spectroscopy

Authors

  • Yufeng Hao,

    1. Center for Integrated Circuit Failure Analysis and Reliability (CICFAR) Department of Electrical and Computer Engineering National University of Singapore 117576 (Singapore)
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  • Yingying Wang,

    1. Division of Physics and Applied Physics School of Physical and Mathematical Sciences Nanyang Technological University 637371 (Singapore)
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  • Lei Wang,

    1. Center for Integrated Circuit Failure Analysis and Reliability (CICFAR) Department of Electrical and Computer Engineering National University of Singapore 117576 (Singapore)
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  • Zhenhua Ni,

    1. Division of Physics and Applied Physics School of Physical and Mathematical Sciences Nanyang Technological University 637371 (Singapore)
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  • Ziqian Wang,

    1. Center for Integrated Circuit Failure Analysis and Reliability (CICFAR) Department of Electrical and Computer Engineering National University of Singapore 117576 (Singapore)
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  • Rui Wang,

    1. Center for Integrated Circuit Failure Analysis and Reliability (CICFAR) Department of Electrical and Computer Engineering National University of Singapore 117576 (Singapore)
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  • Chee Keong Koo,

    1. Center for Integrated Circuit Failure Analysis and Reliability (CICFAR) Department of Electrical and Computer Engineering National University of Singapore 117576 (Singapore)
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  • Zexiang Shen,

    1. Division of Physics and Applied Physics School of Physical and Mathematical Sciences Nanyang Technological University 637371 (Singapore)
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  • John T. L. Thong

    Corresponding author
    1. Center for Integrated Circuit Failure Analysis and Reliability (CICFAR) Department of Electrical and Computer Engineering National University of Singapore 117576 (Singapore)
    • Center for Integrated Circuit Failure Analysis and Reliability (CICFAR) Department of Electrical and Computer Engineering National University of Singapore 117576 (Singapore).
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  • The authors thank Dr. Ting Yu at Nanyang Technological University and Dr. Minggang Xia at Xi'an Jiaotong University for fruitful discussions. This research was financially supported by A*STAR (Project No. 062 101 0023) and the NRF-CRP grant.

Abstract

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Layer number and stacking order of few-layer graphene (FLG) are of particular interest since they directly determine the performance of graphene-based electronic devices. By analyzing Raman spectra and Raman images, quantitative indices are extracted to discriminate the thickness of AB-stacked FLG from single- to five-layer graphene; a few key spectral characteristics are also identified for FLG with misoriented stacking.

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