Gold-Catalyzed Vapor–Liquid–Solid Germanium-Nanowire Nucleation on Porous Silicon

Authors

  • Makoto Koto,

    1. Department of Materials Science and Engineering Stanford University Geballe Laboratory for Advanced Materials 476 Lomita Mall, Stanford, CA 94305–4045 (USA)
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  • Ann F. Marshall,

    1. Department of Materials Science and Engineering Stanford University Geballe Laboratory for Advanced Materials 476 Lomita Mall, Stanford, CA 94305–4045 (USA)
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  • Irene A. Goldthorpe,

    1. Department of Materials Science and Engineering Stanford University Geballe Laboratory for Advanced Materials 476 Lomita Mall, Stanford, CA 94305–4045 (USA)
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  • Paul C. McIntyre

    Corresponding author
    1. Department of Materials Science and Engineering Stanford University Geballe Laboratory for Advanced Materials 476 Lomita Mall, Stanford, CA 94305–4045 (USA)
    • Department of Materials Science and Engineering Stanford University Geballe Laboratory for Advanced Materials 476 Lomita Mall, Stanford, CA 94305–4045 (USA).
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Abstract

Nanoporous Si(111) substrates are used to study the effects of Au catalyst coarsening on the nucleation of vapor–liquid–solid-synthesized epitaxial Ge nanowires (NWs) at temperatures less than 400 °C. Porous Si substrates, with greater effective interparticle separations for Au surface diffusion than nonporous Si, inhibit catalyst coarsening and agglomeration prior to NW nucleation. This greatly reduces the variation in wire diameter and length and increases the yield compared to nucleation on identically prepared nonporous Si substrates.

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