SEARCH

SEARCH BY CITATION

Keywords:

  • field-effect transistors;
  • graphene;
  • nanosheets;
  • solution processes;
  • thin-film transistors
Thumbnail image of graphical abstract

Reduced graphene oxide thin-film transistors exhibit unique channel-length-dependent field-effect mobilities and carrier concentrations due to their structural and electronic properties. Increase in these characteristics with decreasing channel length is a consequence of the hopping transport from nanosheet to nanosheet and pinning of the Fermi energy at source and drain electrodes.