Channel-Length-Dependent Field-Effect Mobility and Carrier Concentration of Reduced Graphene Oxide Thin-Film Transistors

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  • The high-quality graphite samples used in this study were kindly provided by Frontier Materials Development Laboratories of Kaneka Corporation.

Abstract

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Reduced graphene oxide thin-film transistors exhibit unique channel-length-dependent field-effect mobilities and carrier concentrations due to their structural and electronic properties. Increase in these characteristics with decreasing channel length is a consequence of the hopping transport from nanosheet to nanosheet and pinning of the Fermi energy at source and drain electrodes.

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