The high-quality graphite samples used in this study were kindly provided by Frontier Materials Development Laboratories of Kaneka Corporation.
Channel-Length-Dependent Field-Effect Mobility and Carrier Concentration of Reduced Graphene Oxide Thin-Film Transistors†
Article first published online: 6 MAY 2010
Copyright © 2010 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim
Volume 6, Issue 11, pages 1210–1215, June 6, 2010
How to Cite
Kobayashi, T., Kimura, N., Chi, J., Hirata, S. and Hobara, D. (2010), Channel-Length-Dependent Field-Effect Mobility and Carrier Concentration of Reduced Graphene Oxide Thin-Film Transistors. Small, 6: 1210–1215. doi: 10.1002/smll.200902407
- Issue published online: 31 MAY 2010
- Article first published online: 6 MAY 2010
- Manuscript Revised: 1 MAR 2010
- Manuscript Received: 20 DEC 2009
- field-effect transistors;
- solution processes;
- thin-film transistors
Reduced graphene oxide thin-film transistors exhibit unique channel-length-dependent field-effect mobilities and carrier concentrations due to their structural and electronic properties. Increase in these characteristics with decreasing channel length is a consequence of the hopping transport from nanosheet to nanosheet and pinning of the Fermi energy at source and drain electrodes.