Fullerene-Derivative-Embedded Nanogap Field-Effect-Transistor and Its Nonvolatile Memory Application

Authors

  • Seong-Wan Ryu,

    1. Department of Electrical Engineering, College of Information Science & Technology, KAIST, 335 Gwahangno, Yuseong-gu, Daejeon 305-701 (Korea)
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  • Chung-Jin Kim,

    1. Department of Electrical Engineering, College of Information Science & Technology, KAIST, 335 Gwahangno, Yuseong-gu, Daejeon 305-701 (Korea)
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  • Sungho Kim,

    1. Department of Electrical Engineering, College of Information Science & Technology, KAIST, 335 Gwahangno, Yuseong-gu, Daejeon 305-701 (Korea)
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  • Myungsoo Seo,

    1. Department of Electrical Engineering, College of Information Science & Technology, KAIST, 335 Gwahangno, Yuseong-gu, Daejeon 305-701 (Korea)
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  • Changhun Yun,

    1. Department of Electrical Engineering, College of Information Science & Technology, KAIST, 335 Gwahangno, Yuseong-gu, Daejeon 305-701 (Korea)
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  • Seunghyup Yoo,

    1. Department of Electrical Engineering, College of Information Science & Technology, KAIST, 335 Gwahangno, Yuseong-gu, Daejeon 305-701 (Korea)
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  • Yang-Kyu Choi

    Corresponding author
    1. Department of Electrical Engineering, College of Information Science & Technology, KAIST, 335 Gwahangno, Yuseong-gu, Daejeon 305-701 (Korea)
    • Department of Electrical Engineering, College of Information Science & Technology, KAIST, 335 Gwahangno, Yuseong-gu, Daejeon 305-701 (Korea).
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  • This work was supported by the the IT R&D program of MKE/KEIT. [10029953,Terabit Nonvolatile Memory Development].

Abstract

original image

A nanogap field-effect transistor with PCBM, a C60 derivative, is demonstrated, and evidence for nanogap filling is provided. The transistor serves as a charge-based detector to identify the imbibitions of the nanoscale capillary channel originating from the high-electron receptivity of the PCBM. In an extended application, a 2-bit-per-cell nonvolatile memory operation is performed, and the transistor is verified as a promising candidate without interference from adjacent memory cells.

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