This work was supported by the Swiss National Foundation under the NCCR project Quantum Photonics.
Record-Low Inhomogeneous Broadening of Site-Controlled Quantum Dots for Nanophotonics†
Article first published online: 19 MAY 2010
Copyright © 2010 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim
Volume 6, Issue 12, pages 1268–1272, June 21, 2010
How to Cite
Mohan, A., Gallo, P., Felici, M., Dwir, B., Rudra, A., Faist, J. and Kapon, E. (2010), Record-Low Inhomogeneous Broadening of Site-Controlled Quantum Dots for Nanophotonics. Small, 6: 1268–1272. doi: 10.1002/smll.201000341
- Issue published online: 9 JUN 2010
- Article first published online: 19 MAY 2010
- Manuscript Received: 3 MAR 2010
- quantum dots;
Large arrays of dense, site-controlled InGaAs/GaAs quantum dots (QDs) are grown by organometallic chemical vapor deposition in an ordered pattern of tetrahedral recesses (pyramids). These QDs exhibit a low inhomogeneous broadening (≈1 meV), large s–p separation (>50 meV), and efficient single-photon emission.