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Keywords:

  • Graphene;
  • Data storage;
  • Molecular electronics;
  • Transistors;
  • Field effect
Thumbnail image of graphical abstract

A graphene nanoribbon memory cell is fabricated by patterning graphene into nanoribbons using V2O5 nanofibers as etching masks. A pronounced memory effect is observed under ambient conditions. Reliable switching between two conductivity states is demonstrated for clock frequencies of up to 1 kHz and pulse durations as short as 500 ns for > 107 cycles.