Room-Temperature Edge Functionalization and Doping of Graphene by Mild Plasma

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Abstract

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A direct correlation between carrier doping and selective edge functionalization is revealed for graphene treated with a mild NH3 plasma. Raman mapping analysis shows that the D-peak near the edge of the graphene sheet selectively increases after plasma treatment. Electrical measurements show that the Dirac point position of a graphene nanoribbon device shifts toward a negative gate-bias voltage.

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