Seeding of Silicon Wire Growth by Out-Diffused Metal Precipitates

Authors

  • Vidya Ganapati,

    1. Department of Mechanical Engineering, Massachusetts Institute of Technology, 77 Massachusetts Ave, Cambridge, MA 02139, USA
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  • David P. Fenning,

    1. Department of Mechanical Engineering, Massachusetts Institute of Technology, 77 Massachusetts Ave, Cambridge, MA 02139, USA
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  • Mariana I. Bertoni,

    1. Department of Mechanical Engineering, Massachusetts Institute of Technology, 77 Massachusetts Ave, Cambridge, MA 02139, USA
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  • Chito E. Kendrick,

    1. Department of Materials Science and Engineering, and Materials Research Institute, The Pennsylvania State University, University Park, PA 16802, USA
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  • Alexandria E. Fecych,

    1. Department of Mechanical Engineering, Massachusetts Institute of Technology, 77 Massachusetts Ave, Cambridge, MA 02139, USA
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  • Joan M. Redwing,

    1. Department of Materials Science and Engineering, and Materials Research Institute, The Pennsylvania State University, University Park, PA 16802, USA
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  • Tonio Buonassisi

    Corresponding author
    1. Department of Mechanical Engineering, Massachusetts Institute of Technology, 77 Massachusetts Ave, Cambridge, MA 02139, USA
    • Department of Mechanical Engineering, Massachusetts Institute of Technology, 77 Massachusetts Ave, Cambridge, MA 02139, USA.
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Abstract

original image

Metals diffused into bulk silicon can be manipulated to out-diffuse and precipitate in microsized droplets at surfaces, allowing for subsequent silicon wire growth. This technique allows for both high-throughput and precision in the size and positions of metal droplets on the silicon surface.

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