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Stretchable Field-Effect-Transistor Array of Suspended SnO2 Nanowires

Authors

  • Gunchul Shin,

    1. Department of Chemical and Biological Engineering, Korea University, Seoul 136-701, Korea
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  • Chang Hoon Yoon,

    1. Department of Chemical and Biological Engineering, Korea University, Seoul 136-701, Korea
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  • Min Young Bae,

    1. Department of Chemical and Biological Engineering, Korea University, Seoul 136-701, Korea
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  • Yoon Chul Kim,

    1. Department of Chemical and Biological Engineering, Korea University, Seoul 136-701, Korea
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  • Sahng Ki Hong,

    1. Department of Chemical and Biological Engineering, Korea University, Seoul 136-701, Korea
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  • John A. Rogers,

    Corresponding author
    1. Department of Materials Science and Engineering, Frederick Seitz Materials Research Laboratory and Beckman Institute for Advanced Science and Technology, University of Illinois at Urbana-Champaign, Urbana, IL 61801, USA
    • Department of Materials Science and Engineering, Frederick Seitz Materials Research Laboratory and Beckman Institute for Advanced Science and Technology, University of Illinois at Urbana-Champaign, Urbana, IL 61801, USA
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  • Jeong Sook Ha

    Corresponding author
    1. Department of Chemical and Biological Engineering, Korea University, Seoul 136-701, Korea
    • Department of Chemical and Biological Engineering, Korea University, Seoul 136-701, Korea.
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Abstract

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Stretchable device systems with suspended SnO2 nanowires (NWs) as channel materials: Oxygen plasma is used to remove the underlying polymer to float the NWs. These suspended NW field-effect transistors exhibit high electrical performance. By adopting a neutral mechanical plane and curved interconnection, electrical performance of the suspended NW field-effect transistors is maintained under stretching up to approximately 40%.

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