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Wrapping Graphene Sheets Around Organic Wires for Making Memory Devices

Authors

  • Shuai Wang,

    1. Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore 117543, Singapore
    Current affiliation:
    1. These authors contributed equally to this work.
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  • Kiran Kumar Manga,

    1. Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore 117543, Singapore
    Current affiliation:
    1. These authors contributed equally to this work.
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  • Meng Zhao,

    1. Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore 117543, Singapore
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  • Qiaoliang Bao,

    1. Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore 117543, Singapore
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  • Kian Ping Loh

    Corresponding author
    1. Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore 117543, Singapore
    • Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore 117543, Singapore.
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Abstract

Hybrids of organic semiconductors and graphene can generate a whole new class of materials with enhanced properties. A simple solution-phase route to synthesize a hybrid material made of organic nanowires and graphene oxide (GO) sheets is demonstrated by sonicating tetracene molecules and GO together in diluted fuming nitric acid. The self-assembled tetracene-derived organic wires become encapsulated by GO sheets during the reaction to produce an interconnected, one-dimensional/two-dimensional lamellar film. Memory devices fabricated using the hybrid film as the sandwiched layer between aluminum electrodes exhibit excellent electrical bistability. The charge retention properties are attributed to charge transfer and a charge-trapping/detrapping mechanism operational at the interfaces and isolated matrices of the GO–tetracene hybrid.

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