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Full Paper
Self-Aligned Sub-10-nm Nanogap Electrode Array for Large-Scale Integration
Article first published online: 31 MAY 2011
DOI: 10.1002/smll.201100448
Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Additional Information
How to Cite
Gao, P., Zhang, Q., Li, H. and Chan-Park, M. B. (2011), Self-Aligned Sub-10-nm Nanogap Electrode Array for Large-Scale Integration. Small, 7: 2195–2200. doi: 10.1002/smll.201100448
Publication History
- Issue published online: 3 AUG 2011
- Article first published online: 31 MAY 2011
- Manuscript Revised: 4 APR 2011
- Manuscript Received: 9 MAR 2011
- Abstract
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Keywords:
- arrays;
- carbon nanotubes;
- field-effect transistors;
- molecular electronics;
- nanogap electrodes
Abstract
A novel approach to creating a gap on the nanometer scale between two adjacent electrodes of the same or different metals is described. The gap size can be well controlled through sidewall coverage in a self-aligned manner and it can be tuned from 60 nm down to 5 nm with high reproducibility. This technique is fully compatible with traditional microfabrication technology and it is easily implemented to fabricate a nanogap electrode array for integration purposes. An array of short-channel single-walled carbon nanotube field-effect transistors is demonstrated.