Communication

Protein-Based Memristive Nanodevices

  1. Fanben Meng1,
  2. Lin Jiang1,
  3. Kaihong Zheng1,
  4. Chin Foo Goh1,
  5. Sierin Lim2,
  6. Huey Hoon Hng1,
  7. Jan Ma1,
  8. Freddy Boey1,
  9. Xiaodong Chen1,*

Article first published online: 5 SEP 2011

DOI: 10.1002/smll.201101494

Issue

Small

Small

Volume 7, Issue 21, pages 3016–3020, November 4, 2011

Additional Information

How to Cite

Meng, F., Jiang, L., Zheng, K., Goh, C. F., Lim, S., Hng, H. H., Ma, J., Boey, F. and Chen, X. (2011), Protein-Based Memristive Nanodevices. Small, 7: 3016–3020. doi: 10.1002/smll.201101494

Author Information

  1. 1

    School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore

  2. 2

    School of Chemical and Biomedical Engineering, Nanyang Technological University, 70 Nanyang Drive, Singapore 637457, Singapore

*School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore.

Publication History

  1. Issue published online: 28 OCT 2011
  2. Article first published online: 5 SEP 2011
  3. Manuscript Received: 22 JUL 2011

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Keywords:

  • chemical immobilization;
  • nanodevices;
  • ferritin;
  • memristors;
  • lithography
Thumbnail image of graphical abstract

A controllable and reproducible bipolar memristive protein nanodevice is fabricated by chemical immobilization of ferritin molecules within on-wire lithography-generated nanogaps. Control experiments suggest that programmable resistive switching is due to the electrochemical processes in the active centre of ferritin. Such ferritin-based nanodevices with reversible resistance can be used for nonvolatile memory based on write-read-erase cycles.

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