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Tuning Electron Transport in Graphene-Based Field-Effect Devices using Block Co-polymers

Authors

  • Shirui Guo,

    1. Department of Chemistry, University of California, Riverside, 92521, USA
    Current affiliation:
    1. These authors have contributed equally to this work.
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  • Maziar Ghazinejad,

    1. Department of Electrical Engineering, University of California, Riverside, 92521 USA
    Current affiliation:
    1. These authors have contributed equally to this work.
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  • Xiangdong Qin,

    1. Department of Chemistry, University of California, Riverside, 92521, USA
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  • Huaxing Sun,

    1. Department of Chemistry, University of California, Riverside, 92521, USA
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  • Wei Wang,

    1. Materials Science and Engineering Program, Department of Mechanical Engineering, University of California, Riverside, 92521 USA
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  • Francisco Zaera,

    1. Department of Chemistry, University of California, Riverside, 92521, USA
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  • Mihrimah Ozkan,

    Corresponding author
    1. Department of Electrical Engineering, University of California, Riverside, 92521 USA
    • Mihrimah Ozkan, Department of Electrical Engineering, University of California, Riverside, 92521 USA

      Cengiz S. Ozkan, Materials Science and Engineering Program, Department of Mechanical Engineering, University of California, Riverside, 92521 USA.

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  • Cengiz S. Ozkan

    Corresponding author
    1. Materials Science and Engineering Program, Department of Mechanical Engineering, University of California, Riverside, 92521 USA
    • Mihrimah Ozkan, Department of Electrical Engineering, University of California, Riverside, 92521 USA

      Cengiz S. Ozkan, Materials Science and Engineering Program, Department of Mechanical Engineering, University of California, Riverside, 92521 USA.

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Abstract

Graphene possesses many remarkable properties and shows promise as the future material for building nanoelectronic devices. For many applications such as graphene-based field-effect transistors (GFET), it is essential to control or modulate the electronic properties by means of doping. Using spatially controlled plasma-assisted CF4 doping, the Dirac point shift of a GFET covered with a polycrystalline PS-P4VP block co-polymer (BCP) [poly(styrene-b-4-vinylpyridine)] having a cylindrical morphology can be controlled. By changing the chemical component of the microdomain (P4VP) and the major domain (PS) with the CF4 plasma technique, the doping effect is demonstrated. This work provides a methodology where the Dirac point can be controlled via the different sensitivities of the PS and P4VP components of the BCP subjected to plasma processing.

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