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Growth, Characterization, and Properties of Nanographene

Authors

  • Wei Yang,

    1. Beijing National Laboratory for Condensed Matter, Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, P. R. China
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  • Congli He,

    1. Beijing National Laboratory for Condensed Matter, Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, P. R. China
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  • Lianchang Zhang,

    1. Beijing National Laboratory for Condensed Matter, Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, P. R. China
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  • Yi Wang,

    1. Beijing National Laboratory for Condensed Matter, Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, P. R. China
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  • Zhiwen Shi,

    1. Beijing National Laboratory for Condensed Matter, Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, P. R. China
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  • Meng Cheng,

    1. Beijing National Laboratory for Condensed Matter, Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, P. R. China
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  • Guibai Xie,

    1. Beijing National Laboratory for Condensed Matter, Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, P. R. China
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  • Duoming Wang,

    1. Beijing National Laboratory for Condensed Matter, Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, P. R. China
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  • Rong Yang,

    1. Beijing National Laboratory for Condensed Matter, Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, P. R. China
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  • Dongxia Shi,

    1. Beijing National Laboratory for Condensed Matter, Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, P. R. China
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  • Guangyu Zhang

    Corresponding author
    1. Beijing National Laboratory for Condensed Matter, Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, P. R. China
    • Beijing National Laboratory for Condensed Matter, Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, P. R. China.
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Abstract

A systematic study on nanographene grown directly on silicon dioxide substrates is reported. The growth is carried out in a remote plasma-enhanced chemical vapor deposition system at a low temperature of around 550 °C with methane gas as the carbon source. Atomic force microscopy is used to characterize the nanographene morphology, and Raman spectroscopy, X-ray photoelectron spectroscopy, and scanning tunneling microscopy are exploited to identify the in-plane sp2 bonding structures of nanographene samples. Electrical transport properties are measured at various temperatures down to 4 K. Tunneling effects, minimal conductance at the charge-neutral point, sheet resistances, and Dirac point position at different channel lengths are investigated. In addition, nanographene film possesses high transmittance properties, as indicated by transmittance spectra. Nanographene devices are fabricated from rippled structures, and show great promise for strain-gauge sensor applications.

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