Converting Graphene Oxide Monolayers into Boron Carbonitride Nanosheets by Substitutional Doping

Authors

  • Tsung-Wu Lin,

    Corresponding author
    1. Department of Chemistry, Tunghai University, 181 Sec. 3, Taichung Port Rd., Taichung City 40704, Taiwan
    Current affiliation:
    1. These authors contributed equally to this work.
    • Department of Chemistry, Tunghai University, 181 Sec. 3, Taichung Port Rd., Taichung City 40704, Taiwan
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  • Ching-Yuan Su,

    1. Research Center for Applied Sciences, Academia Sinica, 128 Sec. 2, Academia Rd., Nankang, Taipei 11529, Taiwan
    Current affiliation:
    1. These authors contributed equally to this work.
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  • Xin-Quan Zhang,

    1. Department of Chemistry, Tunghai University, 181 Sec. 3, Taichung Port Rd., Taichung City 40704, Taiwan
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  • Wenjing Zhang,

    1. Research Center for Applied Sciences, Academia Sinica, 128 Sec. 2, Academia Rd., Nankang, Taipei 11529, Taiwan
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  • Yi-Hsien Lee,

    1. Research Center for Applied Sciences, Academia Sinica, 128 Sec. 2, Academia Rd., Nankang, Taipei 11529, Taiwan
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  • Chih-Wei Chu,

    1. Research Center for Applied Sciences, Academia Sinica, 128 Sec. 2, Academia Rd., Nankang, Taipei 11529, Taiwan
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  • Hsin-Yu Lin,

    1. Department of Engineering and System Science, National Tsing Hua University, 101 Sec. 2, Kuang Fu Road, Hsinchu 300, Taiwan
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  • Mu-Tung Chang,

    1. Institute of Physics, Academia Sinica, 128 Sec. 2, Academia Rd., Nankang, Taipei 11529, Taiwan
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  • Fu-Rong Chen,

    1. Department of Engineering and System Science, National Tsing Hua University, 101 Sec. 2, Kuang Fu Road, Hsinchu 300, Taiwan
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  • Lain-Jong Li

    Corresponding author
    1. Research Center for Applied Sciences, Academia Sinica, 128 Sec. 2, Academia Rd., Nankang, Taipei 11529, Taiwan
    • Research Center for Applied Sciences, Academia Sinica, 128 Sec. 2, Academia Rd., Nankang, Taipei 11529, Taiwan.
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Abstract

To realize graphene-based electronics, bandgap opening of graphene has become one of the most important issues that urgently need to be addressed. Recent theoretical and experimental studies show that intentional doping of graphene with boron and nitrogen atoms is a promising route to open the bandgap, and the doped graphene might exhibit properties complementary to those of graphene and hexagonal boron nitride (h-BN), largely extending the applications of these materials in the areas of electronics and optics. This work demonstrates the conversion of graphene oxide nanosheets into boron carbonitride (BCN) nanosheets by reacting them with B2O3 and ammonia at 900 to 1100 °C, by which the boron and nitrogen atoms are incorporated into the graphene lattice in randomly distributed BN nanodomains. The content of BN in BN-doped graphene nanosheets can be tuned by changing the reaction temperature, which in turn affects the optical bandgap of these nanosheets. Electrical measurements show that the BN-doped graphene nanosheet exhibits an ambipolar semiconductor behavior and the electrical bandgap is estimated to be ≈25.8 meV. This study provides a novel and simple route to synthesize BN-doped graphene nanosheets that may be useful for various optoelectronic applications.

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