Carbon–Silicon Schottky Barrier Diodes

Authors

  • Chanyoung Yim,

    1. School of Chemistry, Trinity College Dublin, Dublin 2, Dublin, Ireland
    2. Centre for Research on Adaptive Nanostructures and Nanodevices (CRANN), Trinity College Dublin, Dublin 2, Dublin, Ireland
    Search for more papers by this author
  • Niall McEvoy,

    1. Centre for Research on Adaptive Nanostructures and Nanodevices (CRANN), Trinity College Dublin, Dublin 2, Dublin, Ireland
    Search for more papers by this author
  • Ehsan Rezvani,

    1. School of Chemistry, Trinity College Dublin, Dublin 2, Dublin, Ireland
    2. Centre for Research on Adaptive Nanostructures and Nanodevices (CRANN), Trinity College Dublin, Dublin 2, Dublin, Ireland
    Search for more papers by this author
  • Shishir Kumar,

    1. School of Chemistry, Trinity College Dublin, Dublin 2, Dublin, Ireland
    2. Centre for Research on Adaptive Nanostructures and Nanodevices (CRANN), Trinity College Dublin, Dublin 2, Dublin, Ireland
    Search for more papers by this author
  • Georg S. Duesberg

    Corresponding author
    1. School of Chemistry, Trinity College Dublin, Dublin 2, Dublin, Ireland
    2. Centre for Research on Adaptive Nanostructures and Nanodevices (CRANN), Trinity College Dublin, Dublin 2, Dublin, Ireland
    • School of Chemistry, Trinity College Dublin, Dublin 2, Dublin, Ireland.
    Search for more papers by this author

Abstract

original image

The simple fabrication of high-performance Schottky barrier diodes between silicon and conductive carbon films (C-Films) is reported. By optimizing the interface, ideality factors as low as n = 1.22 for pyrolytic photoresist films (PPF) have been obtained. These remarkable values, which are not far away from those of commercial products are obtained repeatedly on non-optimized substrates with fully scalable processes.

Ancillary