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Keywords:

  • carbon;
  • Schottky barrier diodes;
  • pyrolyzed photoresists;
  • pyrolytic carbon;
  • chemical vapor deposition
Thumbnail image of graphical abstract

The simple fabrication of high-performance Schottky barrier diodes between silicon and conductive carbon films (C-Films) is reported. By optimizing the interface, ideality factors as low as n = 1.22 for pyrolytic photoresist films (PPF) have been obtained. These remarkable values, which are not far away from those of commercial products are obtained repeatedly on non-optimized substrates with fully scalable processes.