The fabrication of a field-effect transistor with both channel material and source and drain electrodes made from carbon nanotubes (CNTs) through patterned deposition of CNT films by microcontact printing is described. Surfactant-dispersed single-walled CNTs are first separated into semiconducting and metallic fractions by gel filtration. The semiconducting and metallic CNTs are then sequentially transferred by dendrimer-coated polydimethylsiloxane stamps onto dendrimer-coated silicon wafers following a printing protocol optimized for this purpose. The resulting CNT micropatterns are visualized by atomic force microscopy. Semiconducting as well as metallic CNTs preserve their characteristic electronic properties within the transferred films. A device composed of a rather thick (ca. 5 nm) and densely patterned film of metallic CNTs cross-printed on top of a thinner (ca. 1.5 nm) and less dense film of semiconducting CNTs shows the typical properties of a field-effect transistor with the metallic CNT stripes as electrodes, the semiconductive CNT stripes as channel material, and the silicon substrate as gate electrode.