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Fabrication of a Carbon-Nanotube-Based Field-Effect Transistor by Microcontact Printing

Authors

  • Jan Mehlich,

    1. Organisch-Chemisches Institut and CeNTech, Westfälische Wilhelms-Universität Münster, Corrensstraße 40, 48149 Münster, Germany
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  • Yasumitsu Miyata,

    1. Department of Chemistry and Institute for Advanced Research, Nagoya University, Nagoya 464-8602. Japan
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  • Hisanori Shinohara,

    Corresponding author
    1. Department of Chemistry and Institute for Advanced Research, Nagoya University, Nagoya 464-8602. Japan
    • Department of Chemistry and Institute for Advanced Research, Nagoya University, Nagoya 464-8602. Japan
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  • Bart Jan Ravoo

    Corresponding author
    1. Organisch-Chemisches Institut and CeNTech, Westfälische Wilhelms-Universität Münster, Corrensstraße 40, 48149 Münster, Germany
    • Organisch-Chemisches Institut and CeNTech, Westfälische Wilhelms-Universität Münster, Corrensstraße 40, 48149 Münster, Germany.
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Abstract

The fabrication of a field-effect transistor with both channel material and source and drain electrodes made from carbon nanotubes (CNTs) through patterned deposition of CNT films by microcontact printing is described. Surfactant-dispersed single-walled CNTs are first separated into semiconducting and metallic fractions by gel filtration. The semiconducting and metallic CNTs are then sequentially transferred by dendrimer-coated polydimethylsiloxane stamps onto dendrimer-coated silicon wafers following a printing protocol optimized for this purpose. The resulting CNT micropatterns are visualized by atomic force microscopy. Semiconducting as well as metallic CNTs preserve their characteristic electronic properties within the transferred films. A device composed of a rather thick (ca. 5 nm) and densely patterned film of metallic CNTs cross-printed on top of a thinner (ca. 1.5 nm) and less dense film of semiconducting CNTs shows the typical properties of a field-effect transistor with the metallic CNT stripes as electrodes, the semiconductive CNT stripes as channel material, and the silicon substrate as gate electrode.

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